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| Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.90.3 4.60.2 2.90.2 13.70.2 4.20.2 Solder Dip * High forward current transfer ratio hFE * Satisfactory linearity of forward current transfer ratio hFE * Dielectric breakdown voltage of the package: > 5 kV * High-speed switching 15.00.5 I Features 3.20.1 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -60 -60 -5 -16 -8 20 2.0 150 -55 to +150 C C Unit V V V A A W 0.550.15 2.540.30 5.080.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage temperature I Electrical Characteristics TC = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Collector to emitter voltage Forward current transfer ratio VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = -60 V, IE = 0 VCE = -60 V, IE = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -5 A IC = -5 A, IB = - 0.25 A IC = -5 A, IC = - 0.25 A IC = -4 A, IB1 = -400 mA IB2 = 400 mA, VCC = 50 V 0.2 0.1 0.5 -60 100 30 -1.2 -1.7 0.5 0.15 1.0 V V s s s 230 Min Typ Max -100 -100 Unit A A V 1 |
Price & Availability of 2SA2004
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